| PART |
Description |
Maker |
| RDHA701CD10A2NK |
Neutron and Total Ionizing Dose Test
|
International Rectifier
|
| PSD501B1-12U PSD502B1-12U PSD513B1-12U PSD511B1-12 |
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57Z30 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7250 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH7054 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7160 with optional Total Dose Rating of 1000kRads
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 500kRads
600V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; Similar to IRHN7C50SE with optional Total Dose Rating of 50kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA57260 with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ7130 with optional Total Dose Rating of 1000kRads
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package; A IRHNJ57234SE with Standard Packaging
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB770Z4 with Standard Packaging and Total Dose of 100K Rads (Si)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; JANS Certified device. Equivalent to IR Part Number IRHNA57260SE
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package; A IRH7250SE with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM9150 with optional Total Dose Rating of 300kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9160 with optional Total Dose Rating of 300kRads 现场可编程外
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; A IRH9250 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package; A JANSR2N7382 with Standard Packaging 现场可编程外
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A JANSR2N7424 with Standard Packaging 现场可编程外
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; Similar to IRHNJ597130 with optional Total Dose Rating of 300kRads 现场可编程外
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHM7130 with optional Total Dose Rating of 300kRads 现场可编程外
Field-Programmable Peripheral 现场可编程外
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57034 with optional Total Dose Rating of 1000kRads 现场可编程外
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA7Z60 with optional Total Dose Rating of 500kRads 现场可编程外
|
Fluke, Corp.
飞思卡尔半导体(中国)有限公司
Alliance Semiconductor, Corp.
Atmel, Corp.
Bourns, Inc.
|
| AM29C833PC AM29C833A/B3A AM29C853A/B3A AM29C853/B3 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; JANS Certified version of the IRHF57034 with optional Total Dose Rating of 300kRads
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package; Similar to IRH9250 with optional Total Dose Rating of 300kRads
60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF7970Z4 with Standard Packaging
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 300kRads
150V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package also available with Total Dose Rating of 300kRads; A IRHYS67134CM with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; Similar to IRHF57130 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package; Similar to IRHMJ7250 with optional Total Dose Rating of 500kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA57260 with optional Total Dose Rating of 1000kRads
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package; Similar to IRHYS597Z30CM with optional Total Dose Rating of 300kRads 位总线收发
60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; A IRHLUB7970Z4 with Standard Packaging 位总线收发
Single 8-bit Bus Transceiver 位总线收发
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; A IRHM9130 with Standard Packaging 位总线收发
|
Vectron International, Inc.
Advanced Micro Devices, Inc.
EPCOS AG
3M Company
|
| 5962H9322603VZC 5962H9322603VZX 5962G9322603QXC 59 |
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation. Idle low transciver. Lead finish optional. Mil temp.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 1E6 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish gold. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish gold. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class Q. Lead finish gold. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class V. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose none.
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish solder. Total dose 3E5 rads(Si).
Monolithic transceiver, 5V operation: SMD. Device type 1760, idle low. Class Q. Lead finish optional. Total dose 3E5 rads(Si).
|
Aeroflex Circuit Technology
|
| 5962H0153501QXA 5962H0153501QXC 5962H0153501VXC 59 |
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class Q. Lead finish hot solder dipped.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class Q. Lead finish gold.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class V. Lead finish gold.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class V. Lead finish factory option.
LVDS deserializer:SMD. Total dose 1E6 rad(Si). QML class V. Lead finish hot solder dipped.
Deserializer. Lead finish hot solder dipped.
|
Aeroflex Circuit Technology
|
| AM29C943DE AM29C941PC AM29C941DC |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads
100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器
100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器
|
FCI
NXP Semiconductors N.V.
|
| 5962H0254301QXA 5962H0254301QXC 5962H0254301VXA 59 |
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish solder. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish gold. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish solder. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish gold. Total dose 1E6 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish gold. Total dose 1E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish solder. Total dose 1E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish gold. Total dose 1E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver. CMOS compatible I/O level. Lead finish solder.
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class Q. Lead finish gold. Total dose 3E5 rad(Si).
RadHard schmitt CMOS 16-bit bidirectional multipurpose low voltage transceiver: SMD. Class V. Lead finish solder. Total dose 5E5 rad(Si).
|
Aeroflex Circuit Technology
|
| UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C |
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options.
4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow.
4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si).
4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none.
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
|
AEROFLEX[Aeroflex Circuit Technology]
|
| 5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 59 |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
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Aeroflex Circuit Technology
|
| 5962-9657901QRX |
RadHard MSI: SMD. Octal D flip-flop w/clear. Class Q, QML. Lead finish optional. Total dose none.
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Aeroflex Circuit Technology
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